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 MITSUBISHI TRANSISTOR MODULES
QM30HC-2H
INDUCTION HEATER USE
NON-INSULATED TYPE
QM30HC-2H
* * * *
IC Collector current .......................... 30A VCEX Collector-emitter voltage ......... 1600V hFE DC current gain............................... 75 Non-Insulated Type
APPLICATION Induction heater for cooking
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
62 38 4.5
5.2 26
B
27 52
E
B 0.8
5
C (Case)
E
LABEL
10
2
15
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30HC-2H
INDUCTION HEATER USE
NON-INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso -- -- Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight
(Tj=25C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings -- 1600 1600 10 30 30 310 5 300 -40~+150 -40~+125 Charged part to case, AC for 1 minute Mounting screw M4 Typical value -- 0.98~1.47 10~15 50 Unit V V V V A A W A A C C V N*m kg*cm g
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25C, unless otherwise noted)
Limits Test conditions VCE=1600V, VEB=2V VCB=1600V, Emitter open VEB=10V IC=30A, IB=2A -IC=30A (diode forward voltage) IC=30A, VCE=5V Min. -- -- -- -- -- -- 75 -- VCC=100V, IC=30A, IB1=2A, IB2=-5A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 400 2.0 2.5 1.5 -- 4.0 5.0 3.0 0.4 0.8 0.25 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30HC-2H
INDUCTION HEATER USE
NON-INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
100 Tj=25C 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 1 10 0 VCE=2.0V
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
Tj=25C Tj=125C VCE=5.0V
COLLECTOR CURRENT IC (A)
80 IB=6A IB=4A 60 IB=2A IB=1A 40 IB=0.5A
20
0
DC CURRENT GAIN hFE
0
1
2
3
4
5
2 3 4 5 7 10 1
2 3 4 5 7 10 2
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.4 1.8 2.2 2.6
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 0
BASE CURRENT IB (A)
VBE(sat)
SATURATION VOLTAGE
VCE=5.0V Tj=25C 3.0 3.4
VCE(sat)
IB=2A Tj=25C Tj=125C 2 3 4 5 7 10 2
2 3 4 5 7 10 1
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5 3 2 10 1 7 5 4 3 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
4
ton, ts, tf (s)
ts
3
SWITCHING TIME
tf VCC=100V IB1=2A IB2=-5A Tj=25C Tj=125C 2 3 4 5 7 10 2
2 IC=10A Tj=25C Tj=125C IC=30A
IC=50A
1
0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1
10 0 7 5 4 3 10 0
ton
2 3 4 5 7 10 1
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30HC-2H
INDUCTION HEATER USE
NON-INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
3 2
ts, tf (s) SWITCHING TIME
10 1 7 5 4 3 2 VCC=100V 10 0 IC=30A 7 IB1=2A Tj=25C 5 4 Tj=125C 3 3 4 5 7 10 0 2 3 4 5 7 10 1
ts tf
23
BASE REVERSE CURRENT -IB2 (A)
FORWARD BIAS SAFE OPERATING AREA
10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 TC=25C NON-REPETITIVE 10 -1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 100 tw=100s 1ms DC 500s 90
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT IC (A)
SECOND BREAKDOWN AREA
DERATING FACTOR (%)
80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR DISSIPATION
COLLECTOR-EMITTER VOLTAGE
VCE (V)
CASE TEMPERATURE
TC (C)
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 2 0.5
0.4
Zth (j-c) (C/ W)
0.3
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL)
0.2
0.1 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -12 3 4 5 7 10 0
Tj=25C Tj=125C 0 0.4 0.8 1.2 1.6 2.0
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30HC-2H
INDUCTION HEATER USE
NON-INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 500
400
300
200
100
0 10 0
2 3 4 5 7 10 1
2 3 4 5 7 10 2
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 1.0
0.8 Zth (j-c) (C/ W)
0.6
0.4
0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s)
Feb.1999


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